Ferroelectric-like behavior in HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/AlN metal-insulator-semiconductor capacitor through AlN thermal stress
نویسندگان
چکیده
Abstract By modulating the thermal stress during film growth, strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by metal organic chemical vapor phase deposition (MOCVD) on silicon (Si) (111) substrate. The capacitors AlN fabricated and experimentally demonstrated, linear to was observed, explained in terms of residual strains film. This work reports properties under specific conditions for first time.
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ژورنال
عنوان ژورنال: Materials research express
سال: 2022
ISSN: ['2053-1591']
DOI: https://doi.org/10.1088/2053-1591/ac99c0